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publication number s29cd016g_kgd revision a amendment 0 issue date january 17, 2005 s29cd016g known good die 16 megabit (512 k x 32-bit) cmos 2.5 volt-only burst mode, dual boot, simultaneous read/write flash memory data sheet supplement distinctive characteristics architecture advantages ? simultaneous read/write operations ? data can be continuously read from the 75% bank while executing erase/program functions in the 25% bank ? zero latency between read and write operations ? two bank architecture: 75%/25% ? user-defined x32 data bus ? dual boot block ? top and bottom boot in the same device ? flexible sector architecture ? eight 8 kbytes, thirty 64 kbytes, and eight 8 kbytes sectors ? manufactured on 0.17 m process technology ? secsi (secured silicon) sector (256 bytes) ? factory locked and identifiabl e: 16 bytes for secure, random factory electronic serial number; remainder may be customer data programmed by spansion ? customer lockable: can be read, programmed or erased just like other sectors. once locked, data cannot be changed ? programmable burst interface ? interface to any high performance processor ? modes of burst read operation: ? linear burst : 4 double words and 8 double words with wrap around ? single power supply operation ? optimized for 2.5 to 2.75 volt read, erase, and program operations ? compatibility with jedec standards (jc42.4) ? software compatible with single-power supply flash ? backward-compatible with spansion am29lv and am29f, and fujitsu mbm29lv and mbm29f flash memories performance characteristics ? high performance read access ? initial/random ac cess times as fa st as 64 ns ? burst access time as fast as 10 ns ? ultra low power consumption ? burst mode read: 90 ma @ 56 mhz max ? program/erase: 50 ma max ? standby mode: cmos: 150 a max ? 1 million write cycles per sector typical ? 20 year data re tention typical ? versatile i/o? control ? device generates data outp ut voltages and tolerates data input voltages as determined by the voltage on the v io pin ? 1.65 v to 2.75 v compatible i/o signals ?3.6 v tolerant i/o signals software features ? persistent sector protection ? a command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector (requires only v cc levels) ? password sect or protection ? a sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-definable 64-bit password ? supports common flash interface (cfi) ? unlock bypass program command ? reduces overall programming time when issuing multiple program command sequences ? data# polling and toggle bits ? provides a software method of detecting program or erase operation completion hardware features ? program suspend/resume & erase suspend/ resume ? suspends program or erase operations to allow reading, programming, or erasing in same bank ? hardware reset (reset#), ready/busy# (ry/by#), and write protect (wp#) inputs ? acc input ? accelerates programming ti me for higher throughput during system production ? quality and reliability levels equivalent to standard packaged components
2 s29cd016g known good die s29cd016g_kgda0 january 17, 2005 supplement ta b l e o f c o n t e n t s general description . . . . . . . . . . . . . . . . . . . . . . . . 3 s29cd016g features .............................................................................3 electrical specifications ......................................................................... 4 product selector guide. . . . . . . . . . . . . . . . . . . . . . 5 die photograph . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 die pad locations . . . . . . . . . . . . . . . . . . . . . . . . . . 5 pad description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 pads relative to die center ................................................ 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . 7 packaging information . . . . . . . . . . . . . . . . . . . . . . 8 surftape packaging .................................................................................. 8 gel-pak and waffle pack packaging .................................................. 8 product test flow . . . . . . . . . . . . . . . . . . . . . . . . . . 9 spansion kgd product test flow.......................................... 9 absolute maximum ratings . . . . . . . . . . . . . . . . . 10 maximum negative overshoot waveform ............................. 10 maximum positive overshoot waveform............................... 10 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . . 11 physical specifications . . . . . . . . . . . . . . . . . . . . . . 11 manufacturing information . . . . . . . . . . . . . . . . . . 11 special handling instructions . . . . . . . . . . . . . . . . 11 processing ................................................................................................. 11 storage ....................................................................................................... 11 dc characteristics for kgd devices at 145 c . . . . . . . . . . . . . . . . . . . 12 cmos compatible ............................................................................... 12 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 erase/program operation ? kgd devices at 145 c ................. 12 alternate ce# controlled erase/program operation ? kgd de- vices at 145 c .......................................................................................... 12 terms and conditions of sale for spansion non-vol- atile memory die . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision summary . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision a (january 17, 2005) ..............................................................15
january 17, 2005 s29cd016g_kgd_a0 s29cd016g known good die 3 supplement general description the s29cd016g in known good die (kgd) fo rm is an 16 mbit, 2.5 volt-only flash memory. spansion defines kgd as standard product in die form, tested for func- tionality and speed. spansion kgd products have th e same reliability and quality as spansion products in packaged form. s29cd016g features the s29cd016g is a 16 megabit, 2.5 volt-only single power supply burst mode flash memory device. the device is config ured for 524,288 double words. the de- vice can also be programmed in standard eprom programmers. to eliminate bus contention, each device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. additional control inputs are re- quired for synchronous burst operations: load burst address valid (adv#), and clock (clk). each device requires only a single 2.5 or 2.6 volt power supply (2.5 v to 2.75 v) for both read and writ e functions. a 12.0-volt v pp is not required for program or erase operations, although an acceleration pin is available if faster program- ming performance is required. the device is entirely command set compatible with the jedec single-power- supply flash standard . the unlock bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. the simultaneous read/write architecture provides simultaneous operation by dividing the memory space into two banks. the device can begin programming or erasing in the small bank, and then simultaneously read from the large bank, with zero latency. the device provides a 256-byte secsi? (secured silicon) sector with an one- time-programmable (otp) mechanism. in addition, the device features several levels of sector protection, which can dis- able both the program and erase operations in certain sectors or sector groups: persistent sector protection is a command sector protection method that re- places the old 12 v controlled protection method; password sector protection is a highly sophisticated protection method that requires a password before changes to certain sectors or sector groups are permitted; wp# hardware pro- tection prevents program or erase in the two outermost 8 kbytes sectors of the larger bank. the device defaults to the persistent sector protection mode. the customer must then choose if the standard or password protection method is most desirable. the wp# hardware protection feature is always available, independent of the other protection method chosen. the versatile i/o? (v ccq ) feature allows the output voltage generated on the device to be determined based on the v io level. this feature allows this device to operate in the 1.8 v i/o environment, dr iving and receiving signals to and from other 1.8 v devices on the same bus. in addition, inputs and i/os that are driven externally are capable of handling 3.6 v. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, by reading the dq7 (data# polling), or dq6 (toggle)
4 s29cd016g known good die s29cd016g_kgda0 january 17, 2005 supplement status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and repro- grammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automat- ically inhibits write operations during power transitions. the password and software sector protection feature disables both program and erase opera- tions in any combination of sectors of memory. this can be achieved in-system at v cc level. the program/erase suspend/erase resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the device offers two power-saving features. when addresses have been stable for a specified amount of time, the device enters the automatic sleep mode . the system can also place the device into the standby mode . power consump- tion is greatly reduced in both these modes. amd?s flash technology combines years of flash memory manufacturing experi- ence to produce the highest levels of quality, reliability and cost effectiveness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunneling. the data is pr ogrammed using hot electron injection. electrical specifications refer to the s29cd016g data sheet, publication number 24960, for full electrical specifications on the s29cd016g in kgd form.
january 17, 2005 s29cd016g_kgd_a0 s29cd016g known good die 5 supplement product selector guide part number s29cd016g kgd synchronous/burst or asynchronous standard voltage range: v cc = 2.5 ? 2.75 v speed option (clock rate) 56 mhz 40 mhz max initial/asynchronous access time, ns (t acc )6467 max burst access delay (ns) 10 17 max clock rate (mhz) 56 40 max ce# access, ns (t ce )6971 max oe# access, ns (t oe )2028 die photograph die pad locations 38 41 37 36 35 34 33 32 47 46 45 44 43 42 40 39 31 6 5 4 3 2 1 76 75 74 73 72 71 70 10 11 12 9 8 7 spansion logo location 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 60 59 58 57 56 55 54 53 52 51 50 49 48 61 62 63 64 65 66 67 68 69
6 s29cd016g known good die s29cd016g_kgda0 january 17, 2005 supplement pad description note: the coordinates above are relative to the die center and can be used to operate wire bonding equipment. table 1. pads relative to die center pad signal pad center (mils) pad center (m) pad signal pad center (mils) pad center (m) xyx y xyxy 1 ce# 137.593 4.11 3494.869 104.405 39 v cc -137.624 7.053 -3495.639 179.151 2 oe# 137.593 11.306 3494.869 287.185 40 a9 -137.624 -7.462 -3495.639 -189.525 3 we# 137.593 18.503 3494.869 469.965 41 a1 0 -137.624 -14.658 -3495.639 -372.305 4 wp# 137.593 25.699 3494.869 652.745 42 a1 1 -137.624 -21.854 -3495.639 -555.085 5 ind/wait# 137.823 41.296 3500.712 1048.914 43 a12 -137.624 -29.05 -3495.639 -737.865 6 mch 137.593 59.106 3494.869 1501.304 44 a1 3 -137.624 -36.246 -3495.639 -920.645 7 dq16 128.262 75.281 3257.864 1912.141 45 a1 4 -137.624 -43.442 -3495.639 -1103.425 8 dq17 122.8 75.281 3119.125 1912.141 46 a1 5 -137.624 -50.638 -3495.639 -1286.205 9 dq18 111.643 75.281 2835.721 1912.141 47 a1 6 -132.322 -75.784 -3360.967 -1924.918 10 dq19 106.18 75.281 2696.983 1912.141 48 a1 7 -125.504 -75.784 -3187.801 -1924.918 11 v ccq 98.166 75.281 2493.417 1912.141 49 a18 - 120.144 -75.784 -3051.647 -1924.918 12 v ss 88.992 75.281 2260.402 1912.141 50 dq0 - 105.22 -75.237 -2672.587 -1911.03 13 dq20 80.757 75.281 2051.24 1912.141 51 dq 1 -99.758 -75.237 -2533.85 -1911.03 14 dq21 75.295 75.281 1912.502 1912.141 52 dq2 -88.6 -75.237 -2250.446 -1911.03 15 dq22 64.138 75.281 1629.098 1912.141 53 dq 3 -83.138 -75.237 -2111.708 -1911.03 16 dq23 58.676 75.281 1490.36 1912.141 54 v ccq -75.124 -75.237 -1908.141 -1911.03 17 dq24 -33.786 75.281 -858.164 1912.141 55 v ss -65.95 -75.237 -1675.125 -1911.03 18 dq25 -39.248 75.281 -996.901 1912.141 56 dq4 -57.715 -75.237 -1465.964 -1911.03 19 dq26 -50.406 75.281 -1280.306 1912.141 57 dq5 -52.253 -75.237 -1327.226 -1911.03 20 dq27 -55.868 75.281 -1419.043 1912.141 58 dq6 -41.095 -75.237 -1043.822 -1911.03 21 v ccq -64.103 75.281 -1628.205 1912.141 59 dq7 - 35.633 -75.237 -905.084 -1911.03 22 v ss -73.276 75.281 -1861.221 1912.141 60 dq 8 57.146 -75.237 1451.515 -1911.03 23 dq28 -81.291 75.281 -2064.787 1912.141 61 dq9 62.608 -75.237 1590.252 -1911.03 24 dq29 -86.753 75.281 -2203.525 1912.141 62 dq10 73.766 -75.237 1873.656 -1911.03 25 dq30 -97.911 75.281 -2486.929 1912.141 63 dq11 79.228 -75.237 2012.395 -1911.03 26 dq31 -103.373 75.281 -2625.667 1912.141 64 v ccq 87.463 -75.237 2221.556 -1911.03 27 mch -117.607 75.828 -2987.228 1926.03 65 v ss 96.637 -75.237 2454.572 -1911.03 28 a0 -124.425 75.828 -3160.394 1926.03 66 dq12 104.651 -75.237 2658.138 -1911.03 29 a1 -129.785 75.828 -3296.548 1926.03 67 dq13 110.113 -75.237 2796.876 -1911.03 30 a2 -136.603 75.828 -3469.713 1926.03 68 dq14 121.271 -75.237 3080.28 -1911.03 31 a3 -137.624 62.39 -3495.639 1584.695 69 dq15 126.733 -75.237 3219.018 -1911.03 32 a4 -137.624 55.194 -3495.639 1401.915 70 v ccq 137.593 -62.45 3494.869 -1586.234 33 a5 -137.624 47.997 -3495.639 1219.135 71 re set# 137.593 -55.334 3494.869 -1405.487 34 a6 -137.624 40.801 -3495.639 1036.355 72 clk# 137.593 -47.54 3494.869 -1207.507 35 a7 -137.624 33.605 -3495.639 853.575 73 ry /by# 137.823 -32.453 3500.712 -824.315 36 a8 -137.624 26.409 -3495.639 670.795 74 adv# 137.593 -17.131 3494.869 -435.119 37 v ss -138.446 19.405 -3516.539 492.898 75 v ss 137.593 -11.782 3494.869 -299.269 38 acc -137.624 14.057 -3495.639 357.048 76 v cc 137.593 -2.893 3494.869 -73.492
january 17, 2005 s29cd016g_kgd_a0 s29cd016g known good die 7 supplement ordering information the order number (valid combination) is formed by the following: valid combinations valid combinations list configurations planned to be supported in vo lume for this device. consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. s29cd016g 0j d e i 00 4 packing type 4 = surf tape tgr 5 = emboss tape 7 = waffe pack additional ordering options 00 = 4 mb in bank 1, 12 mb in bank 2, wp# protects sectors 76 and 77 01 = 12 mb in bank 1, 4 mb in bank 2, wp# protects sectors 0 and 1 temperature range i = industrial (?40 c to +85 c) e=extended (?40 c to +125 c) h=hot (?40 c to +145 c) die thickness e = 750 m g = 500 m package type d=die clock frequency 0j = 40 mhz 0m = 56 mhz device number/description s29cd016g 16 megabit (512k x 32-bit) cmos 2.5 volt-only burst mode, dual boot, simultaneous read/write flash memory manufactured on 170 nm floating gate technology opn valid combinations s29cd016g oj, om d e, g i, e, h 00, 01 4, 5, 7
8 s29cd016g known good die s29cd016g_kgda0 january 17, 2005 supplement packaging information surftape packaging gel-pak and waffle pack packaging direction of feed orientation relative to leading edge of tape and reel 16 mm spansion logo location orientation relative to top left corner of gel-pak and waffle pack cavity plate spansion logo location
january 17, 2005 s29cd016g_kgd_a0 s29cd016g known good die 9 supplement product test flow figure 1 provides an overview of spansi on?s known good die test flow. for more detailed information, refer to the s29cd016g product qualification database. spansion implements quality assurance procedures throughout the product test flow. these qa procedures also allow spansion to produce kgd products without requiring or implementing burn-in. in addi tion, an off-line quality monitoring pro- gram (qmp) further guarantees spansion quality standards are met on known good die products. figure 1. spansion kgd product test flow wafer sort 1 bake 24 hours at 250 c wafer sort 2 wafer sort 3 high temperature packaging for shipment shipment dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack wafer sort 4 room temperature dc parameters functionality programmability erasability speed
10 s29cd016g known good die s29cd016g_kgda0 january 17, 2005 supplement absolute maximum ratings storage temperature, plastic packages . . . . . . . . . . . . . . . . ?65c to +150c ambient temperature with power applied . . . . . . . . . . . . . . ?65c to +145c v cc , v io (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ?0.5 v to + 3.0 v acc, a9 , oe# , and reset# (note 2) . . . . . . . . . . . . . . . . . ?0.5 v to +13.0 v address, data, control signals (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ?0.5 v to 3.60 v all other pins (note 1) . . . . . . . . . . . . . . . . . . . . . . . ?0.5 v to +3.60 v output short circuit current (note 3) . . . . . . . . . . . . . . . . . . . . . . . . 200 ma figure 2. maximum negative overshoot waveform figure 3. maximum positive overshoot waveform notes: 1. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, input at i/o pins may overshoot v ss to ?2.0 v for periods of up to 20 ns. maximum dc voltage on output and i/o pins is 3.6 v. during voltage transitions output pins may overshoot to v cc + 2.0 v for periods up to 20 ns. 2. minimum dc input voltage on pins acc, a9, oe#, and reset# is -0.5 v. during voltage transitions, a9, oe#, and reset# may overshoot v ss to ?2.0 v for periods of up to 20 ns. maxi mum dc input voltage on pin a9 and oe# is +13.0 v which may overshoot to 14.0 v for periods up to 20 ns. 3. no more than one output may be shor ted to ground at a time. duration of the short circuit should not be greater than one second. 4. stresses above those listed under ?absol ute maximum ratings? may cause permanent damage to the device. this is a stress rating only; function al operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. expo sure of the device to absolute maximum rating conditions for extended periods may affect device reliability. 20 ns 20 ns +0.8 v ?0.5 v 20 ns ?2.0 v 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v
january 17, 2005 s29cd016g_kgd_a0 s29cd016g known good die 11 supplement operating ranges ambient temperature (t a ), industrial range . . . . . . . . . . . . . ?40c to +85c ambient temperature (t a ), extended range . . . . . . . . . . . . ?40c to +125c ambient temperature (t a ), hot range . . . . . . . . . . . . . . . . ?40c to +150c v cc supply voltage for regulated voltage range . . . . . . . . . . . . 2.5 v to 2.75 v v io supply voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65 v to 2.75 v note: operating ranges define those limits between which the functionality of the de- vice is guaranteed. physical specifications die dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.44 x 4.46 mm die thickness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 or 500 m bond pad size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 x 86 m pad area free of passivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6,724 m 2 pads per die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 bond pad metalization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . al/cu passivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sin/sog/sin manufacturing information manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . fasl test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . fasl manufacturing id (top boot) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98p04ak (bottom boot) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98p04abk preparation for shipment . . . . . . . . . . . . . . . . . . . . . . . . . penang, malaysia fabrication process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . cs59ls die revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 special handling instructions processing do not expose kgd products to ultraviolet light or process them at temperatures greater than 250 c. failure to adhere to these hand ling instructions will result in irreparable damage to the devices. for best yield, spansion recommends assem- bly in a class 10k clean room with 30% to 60% relative humidity. storage store at a maximum temperature of 30 c in a nitrogen-purged cabinet or vac- uum-sealed bag. observe all stan dard esd handling procedures.
12 s29cd016g known good die s29cd016g_kgda0 january 17, 2005 supplement dc characteristics for kgd devices at 145 c cmos compatible notes: 1. current maximum has been significantly increased (x27) from kgd supplement revision a, amendment 1, dated april 21, 2003. 2. the i cc current listed includes both the dc operatin g current and the frequency dependent component. parameter description test conditions min typ max unit i cc1 v cc active asynchronous read current ce# = v il , oe# = v il 1 mhz 5 10 ma i cc3 v cc active burst read current ce# = v il , oe# = v il, 8 double-word 56 mhz 60 90 ma i cc5 (note 1) v cc standby current (cmos) v cc = v ccmax , ce# = v cc 0.3 v 15 150 a i cc7 (note 1) v cc reset current reset = v il 150 a i cc8 (note 1) automatic sleep mode current v ih = v cc 0.3 v, v il = v ss 0.3 v 150 a
january 17, 2005 s29cd016g_kgd_a0 s29cd016g known good die 13 supplement terms and conditions of sale for sp ansion non-volatile memory die all transactions relating to unpackaged di e under this agreement shall be subject to spansion?s standard terms and conditions of sale, or any revisions thereof, which revisions spansion reserves the right to make at any time and from time to time. in the event of conflict between the provisions of spansion?s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. spansion warrants its manufactured unpackaged die whether shipped to cus- tomer in individual dice or wafer form (?known good die,? ?kgd?, ?die,? ?known good wafer?, ?kgw?, or wafer(s)) will meet spansion's published specifications and against defective materials or workmans hip for a period of one (1) year from date of shipment. this limited warranty does not extend be yond the first purchaser of said die or wafer(s). buyer assumes full responsibility to ensure compliance with the appropriate han- dling, assembly and proces sing of kgd or kgw (including but not limited to proper die preparation, die attach, back grinding, singulation, wire bonding and related assembly and test activities), and compliance with all guidelines set forth in spansion's specifications for kgd or kgw, and spansion assumes no respon- sibility for environmental effects on kgd or kgw or for any activity of buyer or a third party that damages the die or wafer(s) due to improper use, abuse, negli- gence, improper installation, improper backgrinding, improper singulation, accident, loss, damage in transit, or unaut horized repair or alteration by a person or entity other than spansion (?limited warranty exclusions?) the liability of spansion under this limited warranty is limited, at spansion's op- tion, solely to repair the die or wafer(s) , to send replacement die or wafer(s), or to make an appropriate credit adjustment or refund in an amount not to exceed the original purchase price actually paid for the die or wafer(s) returned to span- sion, provided that: (a) spansion is promptly notified by buyer in writing during the applicable warranty period of any defect or nonconformity in the die or wa- fer(s); (b) buyer obtains authorization from spansion to return the defective die or wafer(s); (c) the defective die or wafer(s) is returned to spansion by buyer in accordance with spansion's shipping instructions set forth below; and (d) buyer shows to spansion's satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above-referenced warranty ex- clusions. buyer shall ship such defective die or wafer(s) to spansion via spansion's carrier, collect. risk of loss will transfer to spansion when the defec- tive die or wafer(s) is provided to spansion's carrier. if buyer fails to adhere to these warranty returns guidelines, buyer shall assume all risk of loss and shall pay for all freight to spansion's specified location. the aforementioned provisions do not extend the original limited warranty period of any die or wafer(s) that has either been replaced by spansion. this limited warranty is expressed in lieu of all other warranties, expressed or implied, including th e implied warranty of fitness for a particular purpose, the implied warranty of merchantability or noninfringement and of all other obligations or liabilities on spansion's part, and it neither assumes nor authorizes any other per- son to assume for span sion any other liabilities. the foregoing constitutes the buyer's sole and exclusive remedy for the furnish- ing of defective or non conforming known good die or known good
14 s29cd016g known good die s29cd016g_kgda0 january 17, 2005 supplement wafer(s) and spansion shall not in any event be liable for increased manufacturing costs, downtime costs, damages relating to buyer's procurement of substitute die or wa fer(s) (i.e., ?cost of cover?), loss of profits, revenues or good will, loss of use of ordamage to any associated equipment, or any other indirect, incidental, special or consequential damages by reason of the fact that such known good die or known good wafer(s) shall have been determined to be defective or non conforming. buyer agrees that it will make no warranty representations to its customers which exceed those given by spansion to buyer unless and until buyer shall agree to indemnify spansion in writing for any claims which exceed spansion's limited warranty. known good die or known good wafer(s) are not designed or autho- rized for use as components in life support appliances, devices or systems where malfunction of the die or wafer(s) can reasonably be expected to result in a per- sonal injury. buyer's use of known good die or known good wafer(s) for use in life support applications is at buyer's own risk and buyer agrees to fully indemnify spansion for any damages resulting in such use or sale. known good die or known good wafer are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of the die or wafer can reasonably be expected to result in a personal injury. buyer's use of known good die or known good wafe r for use in life support applications is at buyer's own risk and buyer agrees to fully indemnify spansion for any dam- ages resulting in such use or sale.
january 17, 2005 s29cd016g_kgd_a0 s29cd016g known good die 15 supplement revision summary revision a (january 17, 2005) initial release. the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, general office use, personal use, and househol d use, but are not designed, deve loped and manufactured as contem plated (1) for any use that includes fatal risks or dangers that, unless extremel y high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other lo ss (i.e., nuclear reaction control in nucle ar facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). please note that spansion llc will not be liable to you and/or any third party for any claims or damages arising in connection with above- mentioned uses of the products. any semiconductor devices have an inherent chance of failure. you must protect against injury, damage or loss from such failures by incorporatin g safety design measures into your facility and equipment such as re dundancy, fire protection, and prev ention of over-current levels and other abnormal operating conditions. if any products described in this document represent goods or technologies subject to certain restrictions on ex- port under the foreign exchange and foreign trade law of japan , the us export administration regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subject to change without notice. this document may contain information on a spansion llc pro duct under development by spansion llc. spansion llc reserves the right to change or discontinue work on any product without notice. the information i n this document is provided as is without warranty or guarantee of any kind as to its ac curacy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty , express, implied, or stat utory. spansion llc assumes no liability for any damages of any kind arising out of the use of the information in this document. copyright ?2005 spansion llc. all rights re served. spansion, the spansion logo, and mi rrorbit are trademarks of spansion llc. o ther company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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